The physics and modeling of MOSFETS
Series: International series on advances in solid state electronics and technology Published by : World Scientific, (Singapore ; | Hackensack, NJ :) Physical details: xxii, 352 p. : ill.
Subject(s):
Metal oxide semiconductor field-effect transistors.
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Metal oxide semiconductor field-effect transistors
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Mathematical models.
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Electronic books.
Year: 2008
Online resources:
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http://site.ebrary.com/lib/rucke/Doc?id=10686047
- An electronic book accessible through the World Wide Web; click to view
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Includes bibliographical references and index.
Electronic reproduction. Palo Alto, Calif. : ebrary, 2013. Available via World Wide Web. Access may be limited to ebrary affiliated libraries.
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