Rongo Univesity Library catalog › Details for: Terrestrial neutron-induced soft errors in advanced memory devices

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Terrestrial neutron-induced soft errors in advanced memory devices

Additional authors: Nakamura, Takashi, -- 1939- | ebrary, Inc.

Published by : World Scientific, (Hackensack, NJ :) Physical details: xxii, 343 p. : ill. (some col.)

Subject(s): Semiconductor storage devices. | Neutron irradiation. | Radiation dosimetry. | Nuclear physics. | Electronic books.

Year: 2008

Online resources:

http://site.ebrary.com/lib/rucke/Doc?id=10255560
- An electronic book accessible through the World Wide Web; click to view

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Includes bibliographical references (p. 291-315) and index.

Electronic reproduction. Palo Alto, Calif. : ebrary, 2009. Available via World Wide Web. Access may be limited to ebrary affiliated libraries.

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