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Transient-induced latchup in CMOS integrated circuits

by Ker, Ming-Dou.

Additional authors: Hsu, Sheng-Fu. | ebrary, Inc.

Published by : Wiley, (Singapore ; | Hoboken, NJ :) Physical details: xiii, 249 p. : ill.

Subject(s): Metal oxide semiconductors, Complementary -- Defects. | Metal oxide semiconductors, Complementary -- Reliability. | Electronic books.

Year: 2009

Online resources:

http://site.ebrary.com/lib/rucke/Doc?id=10325826
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Includes bibliographical references and index.

Electronic reproduction. Palo Alto, Calif. : ebrary, 2009. Available via World Wide Web. Access may be limited to ebrary affiliated libraries.

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