High-k gate dielectrics for CMOS technology [electronic resource] /
edited by Gang He and Zhaoqi Sun.
- Weinheim : Wiley-VCH, 2012.
- xxxi, 558 p. : ill. (some col.)
Includes bibliographical references and index.
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
Electronic reproduction.
Palo Alto, Calif. :
ebrary,
2013.
Available via World Wide Web.
Access may be limited to ebrary affiliated libraries.
Dielectrics.
Metal oxide semiconductors, Complementary.
Electronic books.
QC585 / .H54 2012eb
538.24
Includes bibliographical references and index.
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.
Electronic reproduction.
Palo Alto, Calif. :
ebrary,
2013.
Available via World Wide Web.
Access may be limited to ebrary affiliated libraries.
Dielectrics.
Metal oxide semiconductors, Complementary.
Electronic books.
QC585 / .H54 2012eb
538.24